| PART |
Description |
Maker |
| M68732EH 68732EH M68732 |
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 520-530MHz / 6.5W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68732L 68732L |
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO 硅场效应晶体管功率放大器00 - 430MHz瓦，调频便携式收音机
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF0342A PF0345A PF0341A PF0343A PF0344A |
MOS FET POWER AMPLIFIER MODULE FOR UHF BAND
|
HITACHI[Hitachi Semiconductor]
|
| M68741 68741 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO 硅场效应晶体管功率放大器89 - 915MHz.8W，便携式收音机调
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68732H 68732H M68732 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68761 68761 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68732SH 68732SH |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
|
Hitachi Semiconductor
Renesas Electronics Corporation
|
| PF08127B E2081606PF08127B E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
|
ETC[ETC]
RENESAS[Renesas Electronics Corporation]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| M67799LA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7.5W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER 400-430MHz 7.5W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
